CS008G 30-60uA

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92K CS008G Plastic-Encapsulate Thyristors Sensitive Gate SCRs MAIN CHARACTERISTICS 0.5A IT( AV ) VDRM/VRRM 600V IGT 200 μA TO-92K 1.CATHODE 2.ANODE 3.GATE FEATURES  PNPN 4-layer Structure SCRs  Mesa Glass Passivated Technology  Multi Layers Metal Electrodes  Sensitive gate trigger APPLICATIONS MARKING  Pulse Igniter CS008G:Part Number  Leakage Protector XXX:Internal Code  Logic Circuit Driver ABSOLUTE RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter Test condition Value Unit Repetitive peak offstate voltage Tj=25℃ 600 V IT(AV) Average on-state current TO-92K(TC≤63℃) 0.5 A IT(RMS) RMS on-state current TO-92K(TC≤63℃)， Fig. 1,2 0.8 A ITSM Non repetitive surge peak on-state current Full sine wave ，Tj(init)=25℃, tp=20ms; Fig. 3,5 8 A I2t value tp=10ms 0.32 A2s Critical rate of rise of on-state current IG=2*IGT, tr≤10ns, F=120HZ, Tj=110℃ 50 A/μs Peak gate current tp=20µs, Tj=110℃ 0.2 A PG(AV) Average gate power Tj=110℃ 0.1 W TSTG Storage temperature -40~+150 Operating junction temperature -40 ~+110 VDRM/ VRRM I2t dIT/dt IGM Tj www.jscj-elec.com 1 ℃ Rev. - 1.0 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Test condition Symbol Parameter IGT Gate trigger current VGT Gate trigger voltage VGD Non-triggering gate voltage VD=VDRM, Tj=125℃ IH Holding current VD=12V, VD=12V, I T =10mA, Tj=25℃, Fig. 6 VD=12V, I T =10mA, Value Unit Min Nom Max 10 - 200 μA - - 0.8 V 0.2 - - V - - 3 mA - - 4 mA 10 - - V/μs Tj=25℃ IG=0.5mA, RGK=1kΩ, Tj=25℃, IL Latching current Fig. 6 dVD/dt Critical rate of rise of off-state VD=67%VDRM, RGK=1kΩ,Tj=110℃ VTM On-state Voltage ITM=1.2A，, Fig. 4 - - 1.5 V Repetitive peak offstate current VD=VDRM/VRRM, Tj=25℃ - - 5 μA VD=VDRM/VRRM,Tj=110℃ - - 100 μA Value Unit IDRM / IRRM THERMAL RESISTANCES Symbol Parameter Rth (j-c) Junction to case (AC) TO-92K 75 ℃/W Rth (j-a) Junction to ambient TO-92K 150 ℃/W PART NUMBER CS 008 G Sensitive Gate SCRs IT(RMS)=0.8A www.jscj-elec.com Package Type 2 Rev. - 1.0 CHARACTERISTICS CURVES FIG.2: RMS on-state current versus case temperature (full cycle) I T(RMS) (A) P(W) 0.8 FIG.1: Maximum power dissipation versus RMS on-state current (full cycle) 0.6 1.0 0.8 0.6 0.4 0.4 0.2 0.2 0 0.4 0.2 0 0.6 0 -50 0.8 I T(RMS) (A) 0 10 4 6 3 4 2 2 1 0 0 10 100 ) 1000 Number of cycles Tj=Tjmax Tj=25ºC ) I GT,I H,I L(T) / I GT,I H,I L(T=25 100 10 2.0 1.5 1.0 0.5 2.5 3.0 V TM (V) FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature (typical values) FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms I TMS (A) Tc 5 8 0 100 FIG.4: On-state characteristics (maximum values) I TM (A) I TMS (A) FIG.3: Surge peak on-state current versus number of cycles 50 3.0 2.5 IH IGT 2.0 IL 1.5 1.0 0.5 1 0.01 www.jscj-elec.com 0.1 1 0.0 -40 10 tp(ms) 3 -20 0 20 40 60 80 120 100 Tj ) Rev. - 1.0 TO-92K http://www.jscj-elec.com/ 4 Rev. - 1.0